发明名称 |
COLD CATHODE SEMICONDUCTOR DEVICE |
摘要 |
<p>1 PHN 9025 The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Said cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.</p> |
申请公布号 |
CA1131795(A) |
申请公布日期 |
1982.09.14 |
申请号 |
CA19790319908 |
申请日期 |
1979.01.18 |
申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
VAN GORKOM, GERARDUS G.P.;HOEBERECHTS, ARTHUR M.E. |
分类号 |
H01J1/30;H01J1/308;H01J9/02;H01J29/04;H01J31/12;H01J37/073;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):01L29/90 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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