Circuit arrangement has bi-directional gate semiconductor relay which is self-closing metal-oxide-semiconductor field-effect transistor, where bulk contact lies at fixed position, and is separated form source contact

摘要

The circuit arrangement has a bi-directional gate semiconductor relay (1) which is a self-closing metal-oxide-semiconductor field-effect transistor (MOSFET). The bulk contact (B) of the MOSFET lies at a fixed position, and is separated form its source contact (S). The bulk contact is laid on a compound, e.g. over a bond wire (11). The bi-directional gate semiconductor relay is provided with drain contact (D) and source contact as power transistor.