| 摘要 |
A semiconductor device comprises a substrate, first strain induction source and drain structures, a first gate structure, a first channel region, second strain induction source and drain structures, a second gate structure, and a second channel region. At least one of the first strain induction source and drain structures has a first proximity degree with respect to the first channel region. At least one of the second strain induction source and drain structures has a second proximity degree with respect to the second channel region. The second proximity degree is different from the first proximity degree. |
