发明名称 POSITIVE TYPE RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a resin composition capable of forming a resist pattern in a second layer without a mixing with the resist pattern in a first layer in a patterning by a double exposure and a method for forming a pattern. <P>SOLUTION: The method for forming the pattern has (1) a process forming a first pattern on a substrate by using the resin composition for forming a first resist layer, (2) a process inactivating the first pattern to a light and (3) a process forming a second resist layer on the substrate forming the first pattern by using the resin composition for forming the second resist layer and exposing a required region. The method for forming the pattern also has (4) a process forming a second pattern in the space section of the first pattern by development. The resin composition for forming the second resist layer contains a resin as an alkali solubility by the working of an acid and a solvent, and the solvent does not dissolve the first resist pattern. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008192774(A) 申请公布日期 2008.08.21
申请号 JP20070024777 申请日期 2007.02.02
申请人 JSR CORP 发明人 NISHIMURA YUKIO;MATSUMURA SHINJI;SAKAI KAORI
分类号 H01L21/027;C08F20/28;G03F7/004;G03F7/039;G03F7/40 主分类号 H01L21/027
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