WIRING STRUCTURE OF SEMICONDUCTOR DEVICE, AND FORMING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To disclose wiring of a semiconductor element and a manufacturing method thereof capable of being formed through a simple process. SOLUTION: The wiring includes: an interlayer dielectric located on a substrate and having an opening; a contact plug filling up the inside of the opening and consisting of first tungsten formed by a vaporization process using the reaction of source gas; and a conductive pattern having a shape of lamination of the first tungsten formed by the vaporization process using the reaction of the source gas and second tungsten formed by a physical gas phase vaporization process and making contact with the upper surface of the contact plug. When the wiring is formed, no flattening process is required. The surface morphology characteristics of the conductive pattern is excellent. COPYRIGHT: (C)2008,JPO&INPIT