发明名称 |
NONVOLATILE MEMORY DEVICE USING RESISTANCE MATERIAL |
摘要 |
The present invention provides a nonvolatile memory device that uses a resistance material. The nonvolatile memory device includes: a stacked memory cell array having a plurality of memory cell layers stacked in a vertical direction, the stacked memory cell array having at least one memory cell group and at least one redundancy memory cell group; and a repair control circuit coupled to the stacked memory cell array, the repair control circuit configured to repair a defective one of the at least one memory cell group with a selected one of the at least one redundancy memory cell group. The features that enable repair improve the fabrication yield of the nonvolatile memory device.
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申请公布号 |
US2008198646(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
US20080031115 |
申请日期 |
2008.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JOON-MIN;KANG SANG-BEOM;CHO WOO-YEONG;OH HYUNG-ROK |
分类号 |
G11C11/00;G11C8/00;G11C17/18;G11C29/00 |
主分类号 |
G11C11/00 |
代理机构 |
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地址 |
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