| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask having less variation of in-plane dimension by providing a dry etching device by which the variation of in-plane dimension is reduced and variation of dimension due to pattern compression is reduced in the mask after etching, in the dry etching device by which a to-be-etched film is etched by an etching chamber including a supply port for rare gas, an exhaust port for in-chamber atmosphere a lower electrode wire-connected to a high frequency power supply and an upper electrode acting as an opposite electrode thereof, and by a reaction between reactive radical species of rare gas atoms produced in a plasma environment of the etching chamber and atoms of the to-be-etched film. <P>SOLUTION: The dry etching device wherein the lower electrode is divided into a plurality of pieces to be arranged in an array form and a high frequency power supply is arranged for each divided lower electrode is provided. At dry etching, etching conditions can be individually set for each divided lower electrode. <P>COPYRIGHT: (C)2008,JPO&INPIT |
