| 摘要 |
PROBLEM TO BE SOLVED: To solve the following problem: a conventional main ferroeletric memory has a complicated control circuit and a long cycle time in reading data, and it has difficulty in incorporating into a general-purpose IC, because the memory executes destructive readout of data and requires rewriting or has a matrix-arranged memory cell to be controlled to prevent the destruction of data. SOLUTION: A field effect transistor having ferroelectric thin films on P-type and N-type gate portions is connected to a power supply terminal so as to have a polarity opposite to a usual polarity, and an electrode of the other terminal and the gate electrode are connected to form an input/output terminal. COPYRIGHT: (C)2008,JPO&INPIT
|
