发明名称 DESIGN METHOD OF MASK PATTERN
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a design method for mask pattern in which an auxiliary pattern for improving a focal depth of an isolated pattern is arranged, with respect to a mask of performing exposure by using a light source having a direction dependence for resolution. <P>SOLUTION: The method of designing a mask pattern used upon exposure having the direction dependency for resolution by using an eight-point light source includes: a step of producing a dummy data 11 of a polygonal shape having two edges which form vortices in the neighborhood of respective vortices of an isolated rectangular pattern 1 and an edge inclined in 45°directions from the two edges; and a step of arranging the auxiliary pattern 2 which adjoins the vortices and has a prescribed positional relation with the dummy data 11. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008191364(A) 申请公布日期 2008.08.21
申请号 JP20070025169 申请日期 2007.02.05
申请人 ELPIDA MEMORY INC 发明人 YASUSATO TADAO
分类号 G03F1/36;G03F1/68;H01L21/027 主分类号 G03F1/36
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