| 摘要 |
PROBLEM TO BE SOLVED: To etch silicon in such a manner that the side wall of a line in a plane may be tilted at the same small angle and aligned when forming the line and a space in the silicon by plasma etching via a mask so patterned as to have a closely-spaced portion and a widely-spaced portion. SOLUTION: A Cl<SB>2</SB>gas and a HBr gas are supplied together with a CO gas and a CO<SB>2</SB>gas as treatment gases, and these treatment gases are plasmatized. By etching using the plasmatized gases, carbon plasma is increased in such a degree that a difference in an amount of a deposit caused by a difference in pattern density can be ignored, thus a difference in the amount of the deposit in the widely-spaced portion and in the closely-spaced portion of the silicon can be reduced. COPYRIGHT: (C)2008,JPO&INPIT
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