Circuits and methods related to low-noise amplifiers having improved linearity

摘要

Disclosed are circuits and methods related to low-noise amplifiers (LNAs) having improved linearity. In some embodiments, a radio-frequency (RF) amplifier circuit can include a first amplifying transistor configured to amplify an RF signal. The RF amplifier circuit can further include a switchable inductance circuit that couples the first amplifying transistor to a signal ground. The switchable inductance circuit can be configured to be capable of providing at least two different inductance values that yield different linearity levels for the RF amplifier circuit. A high linearity performance can be obtained with a higher inductance and a lower bias voltage, thereby reducing power consumption of the RF amplifier. Examples of methods and devices related to such an RF amplifier circuit are disclosed.

主权项

1. A radio-frequency (RF) amplifier circuit comprising:
a first amplifying transistor configured to amplify an RF signal; a switchable inductance circuit that couples the first amplifying transistor to a signal ground, the switchable inductance circuit configured to be capable of having a selected one of a plurality of different inductance values that yield different linearity levels for the RF amplifier circuit; and a processing device configured to determine a linearity mode of the RF amplifier circuit and to control the switchable inductance circuit to have the selected one of the plurality of different inductance values based on the determined linearity mode.