| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device improved in the fatigue behavior of a ferroelectric capacitor, and also to provide its manufacturing method. SOLUTION: In the formation of a PZT film 24a, an organometallic phase growth (MOCVD) method is adopted. The thickness of the film is set at about 5 nm. In the formation of a PZT film 24b, the MOCVD method is also adopted. The thickness of the film is set at about 95 nm. Note that the amount of supply of material gas is adjusted so that the content of Ti is set to be small and the content of Zr is set to be large in the composition of the PZT film 24b in comparison of the composition of the PZT film 24a with the composition of the PZT film 24b. In the formation of a PZT film 24c, for example, a chemical solution deposition (CSD) method is adopted. The thickness of the film is set at about 20 nm. The amount of supply of the material gas is adjusted so that the content of Pb in the PZT film 24c is set to be closer to a stoichiometric composition than the PZT films 24a and 24b. For example, it is set to be nearly equal to the total of the content of Zr and the content of Ti. COPYRIGHT: (C)2008,JPO&INPIT
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