发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING DEVICE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To decrease an initial fraction defective and to prevent a decrease in resistance to electromigration by preventing cap metal from being fused during a washing stage in formation of a wiring groove and a through hole. SOLUTION: As a portion of the cap metal, formed on a lower copper wiring as a bottom portion of an upper-layer wiring opening portion 112 so as to improve contactness, which is connected to at least an upper plug, a denatured film denatured for chemical stabilization is formed to prevent the cap metal from being fused during the washing stage after the wiring groove 113 is formed, and to achieve reduction in initial fraction defective and improvement in resistance to electromigration. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008192939(A) 申请公布日期 2008.08.21
申请号 JP20070027420 申请日期 2007.02.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MURAKAMI KYOJI;SEO KOHEI
分类号 H01L21/768;H01L21/3205;H01L23/52 主分类号 H01L21/768
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