| 摘要 |
PROBLEM TO BE SOLVED: To reduce etching damages at an edge of a magnetoresistive sensor 112 in ion beam etching. SOLUTION: In one embodiment of this invention, ion beam etching (IBE) is used in a track width forming process (S12) of the magnetoresistive sensor 112. This IBE launches an Ar ion beam to a tilted substrate 51 and turns the substrate 51 around its normal line direction as the rotation axis. In a conventional track width forming process, the IBE always applies the Ar ion beam to the substrate 51 while turning it. This IBE, however, applies the Ar ion beam to the substrate 51 only within a specific preset angle range. COPYRIGHT: (C)2008,JPO&INPIT
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