SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE

摘要

A composition for forming a semiconductor interlayer insulation layer and a manufacturing method thereof, a method for forming the semiconductor interlayer insulation layer, and a semiconductor device are provided to obtain coating solution for forming a new porous layer and to obtain a semiconductor device of high performance and reliability having a porous layer therein. A composition for forming a semiconductor interlayer insulation layer includes silicon oxide group corpuscle and a chemical polysiloxane compound. The chemical polysiloxane compound forms silicon-oxygen-silicon boding between the silicon oxide group corpuscles through condensation during the formation of a layer to improve strength of a framework, which is formed of the silicon oxide group corpuscle. Each of the silicon oxide group corpuscles is a zeolite minute particle with zeolite species crystal. Each of the silicon oxide group corpuscles is a minute silica particle.