| 发明名称 |
Method of making a semiconductor device |
| 摘要 |
In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO)2(R2Si2O3)nH2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.
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| 申请公布号 |
US5728630(A) |
申请公布日期 |
1998.03.17 |
| 申请号 |
US19960743190 |
申请日期 |
1996.11.05 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NISHIMURA, HIROYUKI;ADACHI, HIROSHI;ADACHI, ETSUSHI;YAMAMOTO, SHIGEYUKI;MINAMI, SHINTARO;HARADA, SHIGERU;TAJIMA, TORU;HAGI, KIMIO |
| 分类号 |
H01L21/3205;B32B27/08;C08G77/16;H01L21/312;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/3205 |
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