发明名称 |
Method of depositing a metal-containing film |
摘要 |
A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
|
申请公布号 |
US7413776(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20040817618 |
申请日期 |
2004.04.02 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
SHENAI-KHATKHATE DEODATTA VINAYAK;POWER MICHAEL BRENDAN |
分类号 |
C23C16/18;C07C391/00;C07C395/00;C07F7/08;C07F7/30;C23C16/28;C23C16/30;H01L21/205 |
主分类号 |
C23C16/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|