| 发明名称 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same |
| 摘要 |
The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the substrate.
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| 申请公布号 |
US7414298(B2) |
申请公布日期 |
2008.08.19 |
| 申请号 |
US20030633055 |
申请日期 |
2003.07.31 |
| 申请人 |
INTEL CORPORATION |
发明人 |
AHMED SHAHRIAR;BOHR MARK;CHAMBERS STEPHEN;GREEN RICHARD |
| 分类号 |
H01L29/06;H01L21/331;H01L21/8249;H01L27/06;H01L29/08 |
主分类号 |
H01L29/06 |
| 代理机构 |
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