| 摘要 |
A white light emitting diode and a manufacturing method thereof are provided to simplify a manufacturing process of the white LED(Light Emitting Diode) by using an AlGaN layer as a clad layer and an active layer. At least one GaN layer(20,30,40) is formed on a substrate(10). A first AlGaN layer(60) is formed on the GaN layer and doped into n-type. A second AlGaN layer(70) is formed on the first AlGaN layer. An indium element is added into the second AlGaN layer. A third AlGaN layer(80) is formed on the second AlGaN layer and doped into p-type. A first electrode(110) is formed on the third AlGaN layer. A second electrode(120) is formed on the GaN layer. Chemicals, which are composed of Al, In, and Ga elements, are mixed in the second AlGaN layer.
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