| 发明名称 |
Method of making a vertical light emitting diode |
| 摘要 |
Methods are disclosed for forming a vertical semiconductor light emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
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| 申请公布号 |
US7413918(B2) |
申请公布日期 |
2008.08.19 |
| 申请号 |
US20050032881 |
申请日期 |
2005.01.11 |
| 申请人 |
SEMILEDS CORPORATION |
发明人 |
TRAN CHUONG ANH;DOAN TRUNG TRI |
| 分类号 |
H01L21/20;H01L33/22;H01L33/42 |
主分类号 |
H01L21/20 |
| 代理机构 |
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