发明名称 Storage capacitor having a scattering effect and method of manufacturing the same
摘要 A storage capacitor having a scattering effect is positioned in a substrate for use in a thin film transistor array loop. The storage capacitor is characterized by having a rough layer overlapped by a medium layer and a passivation layer. The storage capacitor further has a reflective layer with high reflectivity so as to provide the storage capacitor with the scattering effect toward an external light source. A method of manufacturing the storage capacitor by two photolithography processes is also shown.
申请公布号 US7414824(B2) 申请公布日期 2008.08.19
申请号 US20050908149 申请日期 2005.04.28
申请人 WISTRON OPTRONICS CORPORATION 发明人 HSU HUNG-HUEI
分类号 G02F1/1368;H01G4/228;G02F1/136;G02F1/1362;H01G4/008;H01L21/77;H01L21/8242;H01L27/12;H01L27/13 主分类号 G02F1/1368
代理机构 代理人
主权项
地址