| 摘要 |
<p>PURPOSE: A method of fabricating a liquid crystal display is provided to reduce the number of mask processes to simplify the entire process of fabricating the liquid crystal display. CONSTITUTION: The first metal layer is formed on an insulating substrate(100) having a pixel region(III) and a thin film transistor region(IV) and etched through the first photolithography to form a gate electrode(102) in the TFT region. An insulating layer(105) and an amorphous silicon layer are sequentially formed on the substrate, and the amorphous silicon layer is etched through the second photolithography, to form an active layer(106). The second metal layer is formed on the overall surface of the substrate and etched through the third photolithography to form source and drain electrodes(110a,110b). A passivation layer(112) is formed on the overall surface of the substrate and etched through the fourth photolithography to form an opening. An ITO film is formed on the substrate and etched through th fifth photolithography to form a pixel electrode and a common electrode(114b).</p> |
