SELF-ALIGNED EPITAXIAL GROWTH OF SEMICONDUCTOR NANOWIRES

摘要

Disclosed herein is a method of forming a nanostructure having nanowires by forming a mask with at least one opening on a surface of a substrate, to expose a portion of the surface of the substrate; depositing particles of a metal capable of catalyzing semiconductor nanowire growth on the exposed surface of the substrate by electroplating or electroless plating; and growing nanowires on the plated substrate with a precursor gas by a vapor-liquid-solid (VLS) process. Also disclosed is a nanostructure including nanowires prepared by the above method.