发明名称 Non-Volatile Magnetic Memory Element with Graded Layer
摘要 One embodiment of the present invention includes a non-volatile magnetic memory element including layers any of which are graded.
申请公布号 US2008191295(A1) 申请公布日期 2008.08.14
申请号 US20070776692 申请日期 2007.07.12
申请人 YADAV TECHNOLOGY 发明人 RANJAN RAJIV YADAV;KESHTBOD PARVIZ;MALMHALL ROGER KLAS
分类号 H01L29/82;H01L21/00 主分类号 H01L29/82
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