| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device low in the increase of a threshold current and low in the decrease of slope efficiency at a high temperature. SOLUTION: The semiconductor laser device has a semiconductor layer having an active layer between a p-type clad layer and an n-type clad layer and band gap energy smaller than the band gap energy of the p-type clad layer in the p-type clad layer, where the low end of a conduction band of the semiconductor layer is substantially equal to an energy level to which a Fermi level of the n-type clad layer is extended or more in an energy diagram when the semiconductor laser diode operates. COPYRIGHT: (C)2008,JPO&INPIT
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