发明名称 MANUFACTURING METHOD FOR BAW RESONATOR
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a BAW resonator by which the quality of a piezoelectric thin film of the resonator can be improved. SOLUTION: The manufacturing method for the BAW resonator is characterized in that, on the main surface side of a support substrate, a low-acoustic-impedance layer 12a provided so as to cover the entire surface of the main surface side and a high-acoustic-impedance layer 12b patterned so as to correspond to each of a plurality of resonators 5 are layered alternately so that the top layer is a low-acoustic-impedance layer 12a, thereby forming an acoustic multilayer film; then a conductive layer 2 being a base of a lower electrode 20 is formed on the entire top surface side of the acoustic multilayer film 12 so that recessed parts 12c on the top surface are filled; then the surface of the conductive layer 2 on the opposite side from the acoustic multilayer film 12 is polished and flattened, and after that a piezoelectric material layer 3 being a base of the piezoelectric thin film 30 is formed on the top surface side of the conductive layer 2. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008187295(A) 申请公布日期 2008.08.14
申请号 JP20070017073 申请日期 2007.01.26
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 SHIRAI TAKEO;HAYAZAKI YOSHIKI;MATSUSHIMA CHOMEI;SI-BEI XIONG;YOSHIHARA TAKAAKI;YAMAUCHI NORIHIRO
分类号 H03H3/02;H03H9/17;H03H9/54 主分类号 H03H3/02
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