| 摘要 |
A improved MOSFET ( 50, 51, 75, 215 ) has a source ( 60 ) and drain ( 62 ) in a semiconductor body ( 56 ), surmounted by an insulated control gate ( 66 ) located over the body ( 56 ) between the source ( 60 ) and drain ( 62 ) and adapted to control a conductive channel ( 55 ) extending between the source ( 60 ) and drain ( 62 ). The insulated gate ( 66 ) is perforated by a series of openings ( 61 ) through which highly doped regions ( 69 ) in the form of a series of (e.g., square) dots ( 69 ) of the same conductivity type as the body ( 56 ) are provided, located in the channel ( 55 ), spaced apart from each other and from the source ( 60 ) and drain ( 62 ). These channel dots ( 69 ) are desirably electrically coupled to a highly doped contact ( 64 ) to the body ( 56 ). The resulting device ( 50, 51, 75, 215 ) has a greater SOA, higher breakdown voltage and higher HBM stress resistance than equivalent prior art devices ( 20 ) without the dotted channel. Threshold voltage is not affected.
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