| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a high precision phase shift mask capable of suppressing the generation of particles which cause film defects, having a homogeneous shifter film and adaptable to the minute and highly integrated state of a semiconductor integrated circuit by forming a phase shifter of lithium tantalate. SOLUTION: The phase shift mask has a phase shifter of a 2nd light transmission part 2a on a substrate 1 through which light for exposure passes and the phase shifter is formed of lithium tantalate. The phase shifter shifts the phase of transmitted light for exposure by 180± 5 deg. and has 3-40% transmittance. The phase shift mask is produced through a step for forming a lithium tantalate film 2 by sputtering on the substrate 1 which transmits light for exposure, a step for forming a resist pattern on the lithium tantalate film 2 and a step for patterning the lithium tantalate 2 by dry etching using the resist pattern.</p> |
