MOS-type image sensing device

摘要

In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element (901), a first switch (911) for transferring charge generated by the photoelectric conversion element, a field effect transistor (903), having a gate area for receiving the transferred charge, for outputting a signal corresponding to the charge stored in the gate area, and a second switch (902) for resetting the gate area of the field effect transistor, it is determined that the threshold voltages of the first switch and the second are different from the threshold voltage of the field effect transistor.