| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent generation of a bridge between drain contact plugs by preventing generation of a bowing effect. An interlayer dielectric(104) is formed on an upper part of a semiconductor substrate(100). A trench is formed on the interlayer dielectric. An etch protection layer(116) is formed on a sidewall of the trench. A contact hole is formed by etching the interlayer dielectric corresponding to a region on which the trench is formed. A contact plug(120) is formed within the drain contact hole. An etch stop layer is formed on the upper part of the semiconductor substrate before the interlayer dielectric is formed. The etch stop layer is a low-pressure nitride layer or a plasma enhanced nitride layer.
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