发明名称 Memory module and memory system
摘要 A memory module has a plurality of DRAMs ( 115 ), which share a bus line, on the front surface and the back surface of a board. The bus line is connected through a via hole ( 113 ) from a terminal ( 111 ) to one end of a strip line ( 112 ), and the other end of the strip line is connected to a strip line in the other layer through a via hole ( 119 ) provided for looping back the line. A termination resistor ( 120 ), provided near a termination voltage terminal (VTT), is connected to the looped-back strip line in the other layer through a via hole. The DRAM terminals are connected to the strip line each through a via hole. This memory module is mounted on a motherboard, on which a memory controller is provided, through a connector. The effective characteristic impedance of the bus line is matched with the characteristic impedance of the line in the motherboard.
申请公布号 US7411806(B2) 申请公布日期 2008.08.12
申请号 US20060634405 申请日期 2006.12.06
申请人 ELPIDA MEMORY, INC. 发明人 FUNABA SEIJI;NISHIO YOJI;SHIBATA KAYOKO
分类号 G06F13/16;G11C5/06;G06F12/00;G11C5/02;G11C5/04;G11C7/10;G11C8/02;G11C11/4093 主分类号 G06F13/16
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