发明名称 Method for stabilizing high pressure oxidation of a semiconductor device
摘要 A method and apparatus for preventing N<SUB>2</SUB>O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N<SUB>2</SUB>O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N<SUB>2</SUB>O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N<SUB>2</SUB>O going super critical. By preventing the N<SUB>2</SUB>O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
申请公布号 US7410911(B2) 申请公布日期 2008.08.12
申请号 US20050251973 申请日期 2005.10.17
申请人 MICRON TECHNOLOGY, INC. 发明人 GEALY DANIEL;CHAPEK DAVE;DEBOER SCOTT;AL-SHAREEF HUSAM N.;THAKUR RANDHIR
分类号 H01L21/324;C30B33/00;H01L21/316 主分类号 H01L21/324
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