DOUBLE SIDE GRINDING MACHINE FOR SEMICONDUCTOR WAFER, STATIC PRESSURE PAD, AND DOUBLE SIDE GRINDING METHOD USING SUCH STATIC PRESSURE PAD

摘要

In a double side grinding machine for semiconductor wafers, static pressure pads contactlessly support a source wafer at both surfaces of the source wafer by the static pressure of a fluid supplied to both surfaces of the source wafer. The static pressure pads have land patterns that are mounds surrounding pockets formed on the surfaces of the static pressure pads on the side at which the source wafer is supported. The land patterns include periphery land patterns that are necessary for supporting the source wafer and concentrically disposed with respect to the rotation center of the source wafer, and land patterns that are formed inside from the periphery land patterns, non-concentrically disposed with respect to the rotation center of the source wafer, and asymmetrically disposed with respect to all lines dividing the static pressure pads in half. This provides a double side grinding machine for semiconductor wafers and a double side grinding method capable of minimizing "intermediate ring" that is the average value component obtained by averaging the nanotopography of a wafer after performing double side grinding.