| 摘要 |
<p>On a Si substrate (1), i.e., a semiconductor substrate, a gate insulating film (2) is formed, and then a W film (3a) is formed on the gate insulating film (2) by CVD wherein a film forming gas including W(CO)6 gas is used. Then, the film is oxidized under existence of the reducing gas, and the W in the W film (3a) is not oxidized but only C is selectively oxidized to reduce the concentration of C contained in the W film (3a). Then, after performing heat treatment as needed, resist coating, patterning, etching and the like are performed, then, an impurity diffused region (10) is formed by ion implantation and the like, and a semiconductor device having a MOS structure is formed.</p> |
