| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a voltage generation circuit and a use voltage supply method for a semiconductor memory device, by which the necessary voltage can be generated by using external power supply voltages different in level. <P>SOLUTION: The voltage generation circuit for the semiconductor memory device is equipped with first and second initializing signals generation section for generating the first and second initializing signals respectively in accordance with first and second external power supply voltages different in voltage level, and an output high voltage generation section for generating the first and second output high voltages by independently driving the first and second external power supply voltages in accordance with the first and second initializing signals to synthetically output these voltages through a common output end. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
