发明名称 |
Source and drain structures and manufacturing methods |
摘要 |
A semiconductor structure includes a semiconductor substrate; a first gate dielectric on the semiconductor substrate; a first gate electrode over the first gate dielectric; a first lightly doped source or drain (LDD) region in the semiconductor substrate and adjacent the first gate dielectric, wherein the first LDD region comprises arsenic; and a first deep source/drain region in the semiconductor substrate and adjacent the first gate dielectric. The first deep source/drain region comprises phosphorous, and a first phosphorous junction depth in the first deep source/drain region is greater than about three times a first arsenic junction depth in the first deep source/drain region.
|
申请公布号 |
US2008185665(A1) |
申请公布日期 |
2008.08.07 |
申请号 |
US20070702807 |
申请日期 |
2007.02.06 |
申请人 |
LIAW JHON-JHY;CHIANG MU-CHI |
发明人 |
LIAW JHON-JHY;CHIANG MU-CHI |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|