<p>A Fabry-Perot type semiconductor laser consisting of III nitride semiconductor of hexagonal structure where the crystal face other than the c face is permitted to be a crystal growth main face.The semiconductor laser has the +c axis side end face and the -c axis side end face parallel with a plane intersecting the c axis. The laser output from the +c axis side end face is set larger than the laser output from the -c axis side end face, and the +c axis side end face serves as the laser exit end face. A waveguide is preferably formed in parallel with the projection vector to the crystal growth main face of the c axis. The crystal growth main face is preferably the m face. Furthermore, the +c axis side end face is preferably the +c face and the -c axis side end face is preferably the -c face.</p>
