FLASH MEMORY OF HYBRID COMBINATION AND METHOD FOR MANUFACTURING THEREOF

摘要

A non-volatile memory device having a nano wire-nano particle hetero-combination and a manufacturing method thereof are provided to maximize transportation performance of electric charges by using a nano-wire as a migration channel. A source electrode(31) and a drain electrode(33) are formed on a silicon substrate(10). A semiconductor nano-wire(40) is used for connecting the source electrode and the drain electrode to each other in a floating state from the silicon substrate. A tunneling layer is coated on the semiconductor nano-wire by using an atomic layer deposition method. An electric charge storage layer is formed to surround the tunneling layer and includes nano-particles attached to a surface of the tunneling layer in a solution including the nano-wire coated with the tunneling layer. A gate electrode(35) is formed to surround an oxide layer. The gate electrode is formed on the silicon substrate between the source electrode and the drain electrode.