| 摘要 |
<P>PROBLEM TO BE SOLVED: To lower an operating voltage without causing damage to an active layer. <P>SOLUTION: A semiconductor light-emitting element comprises a ä0001} n-type semiconductor substrate 1 comprising a group III-V semiconductor and having an angle of gradient in a <1-100> direction of not smaller than 0°nor larger than 45° and an angle of gradient in a <11-20> direction of not smaller than 0°nor larger than 10°; an n-type layer 2 comprising the group III-V semiconductor provided on the n-type semiconductor substrate; an n-type guide layer 3 comprising the group III-V semiconductor provided on the n-type layer; the active layer 4 comprising the group III-V semiconductor provided on the n-type guide layer; a p-type first guide layer 5 comprising the group III-V semiconductor provided on the active layer; a p-type contact layer 9 comprising the group III-V semiconductor provided on the p-type first guide layer; and a concave and convexity layer 8 formed between the p-type first guide layer and the p-type contact layer, having an irregular upper surface shape, and comprising the group III-V semiconductor with its p-type impurity concentration lower than that of the p-type contact layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
