发明名称 DIFFUSION BARRIER LAYER FOR MEMS DEVICES
摘要 Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.
申请公布号 KR20080072872(A) 申请公布日期 2008.08.07
申请号 KR20087012655 申请日期 2008.05.27
申请人 IDC, LLC 发明人 WANG HSIN FU;TUNG MING HAU;ZEE STEPHEN
分类号 B81B3/00;H01L23/06 主分类号 B81B3/00
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