发明名称 |
SEMICONDUCTOR STRUCTURE INCLUDING DOPED SILICON CARBON LINER LAYER AND METHOD FOR FABRICATION THEREOF |
摘要 |
A semiconductor structure and related method for fabrication thereof includes a liner layer interposed between: (1) a pedestal shaped channel region within a semiconductor substrate; and (2) a source region and a drain region within a semiconductor material layer located upon the liner layer and further laterally separated from the pedestal shaped channel region within the semiconductor substrate. The liner layer comprises an active doped silicon carbon material. The semiconductor material layer may comprises a semiconductor material other than a silicon carbon semiconductor material. The semiconductor material layer may alternatively comprise a silicon carbon semiconductor material having an opposite dopant polarity and lower carbon content in comparison with the liner layer. Due to presence of the silicon carbon material, the liner layer inhibits dopant diffusion therefrom into the pedestal shaped channel region. Electrical performance of a field effect device that uses the pedestal shaped channel region is thus enhanced.
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申请公布号 |
US2008185636(A1) |
申请公布日期 |
2008.08.07 |
申请号 |
US20070672109 |
申请日期 |
2007.02.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LUO ZHIJIONG;LIU YAOCHENG |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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