摘要 |
<p>An electronic device can include a field isolation region (22) and a first insulating layer (42) having a first strain and having a portion (421), which from a top view, lies entirely within the field isolation region (22). The electronic device can also include a second insulating layer (72) having a second strain different from the first strain and including an opening. From a top view, the portion (421) of the first insulating layer (72) can lie within the opening in the second insulating layer (72). In one embodiment, the field isolation region (22) can include a dummy structure (241) and the portion of the first insulating layer (421) can overlie the dummy structure (241). A process of forming the electronic device can include forming an island portion (421) of an insulating layer (72) wherein from a top view, the island portion (421) lies entirely within the field isolation region (22).</p> |
申请人 |
GRUDOWSKI, PAUL, A.;KOLAGUNTA, VENKAT, R.;SHROFF, MEHUL, D.;FREESCALE SEMICONDUCTOR INC. |
发明人 |
GRUDOWSKI, PAUL, A.;KOLAGUNTA, VENKAT, R.;SHROFF, MEHUL, D. |