| 发明名称 |
Lateral undercut of metal gate in SOI device |
| 摘要 |
Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer, source/drain extensions a distance beneath the metal gate, and lateral undercuts in the sides of the metal gate.
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| 申请公布号 |
US2008188041(A1) |
申请公布日期 |
2008.08.07 |
| 申请号 |
US20080079587 |
申请日期 |
2008.03.26 |
| 申请人 |
DATTA SUMAN;BRASK JUSTIN K;KAVALIEROS JACK;DOYLE BRIAN S;DEWEY GILBERT;DOCZY MARK L;CHAU ROBERT S |
发明人 |
DATTA SUMAN;BRASK JUSTIN K.;KAVALIEROS JACK;DOYLE BRIAN S.;DEWEY GILBERT;DOCZY MARK L.;CHAU ROBERT S. |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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