SPUTTERING TARGET, TRANSPARENT CONDUCTIVE THIN FILM AND METHOD OF FABRICATING THEREOF

摘要

A transparent conductive layer and a manufacturing method thereof are provided to enhance electrical conductivity and light-transmitting characteristics by using a sputtering target including ZnO and In2O3. A transparent conductive layer includes ZnO doped with In and has a polycrystalline structure. An atomic ratio of In:O:Zn within the transparent conductive layer is 0.06-0.08: 0.9-1.1: 1. The transparent conductive layer has resistivity of 8x10^-4 to 5x10^-3. The transparent conductive layer has a transmittance of 85 percent or more. The transparent conductive layer has an etch ratio of 3 to 5 nm/sec. A manufacturing method of the transparent conductive layer includes a process for heating the substrate and forming a thin film on the substrate by using a sputtering target, and a process for heating the substrate at the temperature of 100-500 degrees centigrade.