摘要 |
<p>A plasma reactor includes a ceiling electrode facing a workpiece support pedestal and a pedestal electrode in the pedestal and first and second VHF power sources of different frequencies coupled to the same or to different ones of the ceiling electrode and the pedestal electrode. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution nonuniformities, respectively, in the chamber. The reactor further includes a controller programmed to change the relative output power levels of the first and second VHF power sources to: (a) increase the relative output power level of the first VHF power source whenever plasma ion distribution has a predominantly edge-high non-uniformity, and (b) increase the relative output power level of the second VHF power source whenever plasma ion distribution has a predominantly center-high non-uniformity.</p> |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
COLLINS, KENNETH S.;HANAWA, HIROJI;RAMASWAMY, KARTIK;BUCHBERGER, JR., DOUGLAS A.;RAUF, SHAHID;BERA, KALLOL;WONG, LAWRENCE;MERRY, WALTER R.;MILLER, MATTHEW L.;SHANNON, STEVEN C.;NGUYEN, ANDREW;CRUSE, JAMES P.;CARDUCCI, JAMES;DETRICK, TROY S.;DESHMUKH, SUBHASH;SUN, JENNIFER Y. |