| 摘要 |
<p>A method for repairing a pin hole defect of a photo mask is provided to dramatically improve the accuracy of a defect repair by using an AFM(Atomic Force Microscope) tip. A first material layer including a defect of a pin hole(106) is formed on a substrate(100). A resist(108) is coated on the substrate. The resist corresponding to the defect of the pin hole is exposed by using an AFM tip(110). The exposed resist is developed to expose the defect of the pin hole. The first material layer is deposited on a region of the defect to repair the defect of the pin hole. An electron bean resist is used as the resist. Alternatively, a positive electron beam resist is used as the resist. Before the resist is coated on the substrate, information with respect to a coordinates of a defect position, a size and shape of the defect is acquired.</p> |
