发明名称 |
Thin film transistor, display device and their production |
摘要 |
The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.
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申请公布号 |
US7407846(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20070672908 |
申请日期 |
2007.02.08 |
申请人 |
HITACHI, LTD. |
发明人 |
ANDO MASAHIKO;WAKAGI MASATOSHI;SASAKI HIROSHI |
分类号 |
H01L21/00;H01L51/05;H01L21/336;H01L21/84;H01L29/786;H01L51/00;H01L51/30;H01L51/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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