发明名称 Low power, low noise band-gap circuit using second order curvature correction
摘要 A band-gap reference circuit comprising a first current source for generating a first reference current and a first circuit branch for receiving part of the first reference current. The first circuit branch comprises a first resistor having a positive temperature coefficient in series with a base-emitter junction of a first PNP diode having a negative temperature coefficient. An emitter current of the first PNP diode develops a first combined voltage across the first resistor and the base-emitter junction. A comparison circuit compares the first combined voltage to a base-emitter voltage of a second PNP diode and adjusts a band-gap reference voltage. A correction current generating circuit injects a correction current into an emitter of the second PNP diode that at least partially offsets a non-linear drop-off in the band-gap reference voltage caused by the second PNP diode as temperature increases.
申请公布号 US7408335(B1) 申请公布日期 2008.08.05
申请号 US20040828546 申请日期 2004.04.19
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 WONG KERN W.;XIN-LEBLANC JANE
分类号 G05F3/20;G05F3/16;G05F3/30 主分类号 G05F3/20
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