发明名称 |
Low power, low noise band-gap circuit using second order curvature correction |
摘要 |
A band-gap reference circuit comprising a first current source for generating a first reference current and a first circuit branch for receiving part of the first reference current. The first circuit branch comprises a first resistor having a positive temperature coefficient in series with a base-emitter junction of a first PNP diode having a negative temperature coefficient. An emitter current of the first PNP diode develops a first combined voltage across the first resistor and the base-emitter junction. A comparison circuit compares the first combined voltage to a base-emitter voltage of a second PNP diode and adjusts a band-gap reference voltage. A correction current generating circuit injects a correction current into an emitter of the second PNP diode that at least partially offsets a non-linear drop-off in the band-gap reference voltage caused by the second PNP diode as temperature increases.
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申请公布号 |
US7408335(B1) |
申请公布日期 |
2008.08.05 |
申请号 |
US20040828546 |
申请日期 |
2004.04.19 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
WONG KERN W.;XIN-LEBLANC JANE |
分类号 |
G05F3/20;G05F3/16;G05F3/30 |
主分类号 |
G05F3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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