| 摘要 |
A preparation method of indium oxide powder and a preparation method of ITO target using the indium oxide powder are provided to obtain ITO target of ultra high density using the indium oxide powder having uniform dispersibility and excellent property by minimizing the cohesive power of indium oxide powder in an ultrasonic chemistry reaction in order to obtain excellent ITO thin film. A preparation method of indium oxide powder comprises steps of: preparing a solution or a mixture solution comprising indium ion from water-soluble trivalent indium salt, such as InCl3, In(NO3)3, In2(SO4)3 and In(CH3COO)3(S1); preparing indium hydroxide powder by neutralizing the indium-containing solution by using a neutralizing agent selected from NH3 gas, NH4OH and water-soluble primary amines while stirring(S2), applying an ultrasonic wave for the reaction vessel having the indium solution for neutralization using a neutralizing agent through gas nozzle while stirring the reaction vessel(S3), placing the indium solution which is reacted with the neutralizing agent in a dilution vessel(S4), and in a state of applying ultrasonic wave in the diluted neutralizing agent aqueous solution while stirring(S5), introducing the indium solution through liquid feed nozzle to a pump for a reverse neutralization ultrasonic chemistry reaction(S6) in order to obtain indium hydroxide powder(S7); concentrating and washing the prepared indium hydroxide slurry by using pure water of 40deg.C in a high speed rotary filtration device and drying the concentrated slurry in an air-jet dryer(S8); carrying out heat treatment for the dried powder in a calcination vessel consisting of highly pure alumina or zirconia at 600-900deg.C for 1 hour(S9); oxidizing the powder(S10); resuspending the obtained powder by mixing the obtained indium oxide and tin oxide powder in a ratio of 9:1 by weight in a slurry suspending tank, followed by subjecting the mixture in bead mill treatment and incorporating 0.4-0.8% of binder in the mixture(S11); and making powder particles by spray-drying the resuspended mixture at 120-180deg.C in order to obtain assembling powder and forming a plate by filling and pressing the obtained powder in a rectangular mold(S12). A preparation method of ITO target comprises steps of: calcining the plate at 1,200-1,600deg.C for 1-3 hours(S13); processing the calcined plate by face process and cutting(S14); and obtaining an ITO target(S15).
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