| 摘要 |
<p>A method for forming a fine pattern of a semiconductor device is provided to secure the length of a major axis of a hard mask pattern and a subsequent process margin by using a photoresist pattern with a contact hole transmitting unit. Hard mask layers(13,15) are formed on an upper portion of an etching target layer(11) formed on a semiconductor substrate. A first positive photoresist layer is applied to an upper portion of the hard mask layer. A double exposure process and a development process are performed on the first positive photoresist layer to form a line and space shaped first positive photoresist pattern. The hard mask layer is patterned by using the line and space shaped first positive photoresist pattern as an etching mask. A second photoresist layer is applied to an upper portion of a line and space shaped hard mask pattern. A third exposure and development process is performed on the second positive photoresist by using an exposure mask having a contact hole transmitting unit to form a second positive photoresist pattern so that a part of the hard mask pattern is exposed. The hard mask pattern is patterned by using the second positive photoresist pattern having a contact hole opening as an etching mask to form an island shaped hard mask pattern.</p> |
